Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel high electron mobility transistors

High-Electron Mobility Graphene Channel Transistors for Millimeter-Wave Applications

We have fabricated and characterized the graphenechannel field effect transistors (GFETs) on semi-insulating SiC substrates. In our first GFETs, the device exhibits n-type FET operation with the transconductance of 0.1 mS/mm at the drain voltage of 0.5 V. The current gain cutoff frequency characterized by S parameter measurement is 0.5 GHz. These characteristics are primarily limited by the low...

Electron transport in nitrogen-polar high electron mobility transistors

Quantum Confinement in High Electron Mobility Transistors

Modulation-doped semiconductor nanostructures exhibit extraordinary electrical and optical properties that are quantum mechanical in nature. The heart of such structures lies in the heterojunction of two epitaxially grown semiconductors with different band gaps. Quantum confinement in this heterojunction is a phenomenon that leads to the quantization of the conduction and the valence band into ...

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...

Passivated AlGaN / GaN High Electron Mobility Transistors

AlGaN/GaN high electron mobility transistors (HEMTs) passivated with LPCVD SiyNz and AlxSiyNz were fabricated side-by-side, and their performance compared in DC, small-signal, and large-signal test environments. AlxSiyNz passivated devices measured a reduced dependence of source resistance with drain current density, 1.5 x the breakdown voltage, and an increased microwave output power and power...